WNM3007 n-channel, 30.5v, 12.3a, power mosfet descriptions the WNM3007 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion and power switch applications. standard product WNM3007 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sop-8l applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sop-8l configuration (top view) WNM3007 yyww WNM3007 = device code yy = year ww = week marking order information device package shipping WNM3007-8/tr sop-8l 2500/tape&reel v (br)dss rds(on) ( ? ) id (a) 0.0105@ 10v 9.0 0.0105@ 10v 3.0 30.5 0.013@ 4.5v 7.0 d 8 7 6 1 2 3 5 4 1 g s 76 8 234 5 s s d d d 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 30 gate-source voltage v gs 20 v t a =25c 12.3 9.1 continuous drain current a t a =70c i d 9.8 7.3 a t a =25c 3.0 1.6 maximum power dissipation a t a =70c p d 1.9 1.0 w t a =25c 11.1 8.8 continuous drain current b t a =70c i d 8.9 7.0 a t a =25c 2.5 maximum power dissipation b t a =70c p d w pulsed drain current c i dm 40 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c parameter symbol typical maximum unit t ? 10 s 41 52 junction-to-ambient thermal resistance a steady state r ja 75 98 t ? 10 s 50 62 junction-to-ambient thermal resistance b steady state r ja 80 103 junction-to-case thermal resistance steady state r jc 27 35 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. 1.6 1.0 1.5 WNM3007 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 30.5 v zero gate voltage drain current i dss v ds = 30 v, v gs = 0v 100 na gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 1.0 1.45 1.8 v v gs = 10v, i d = 9.0a 10.5 13 v gs = 10v, i d = 3.0a 10.5 13 drain-to-source on-resistance r ds(on) v gs = 4.5v, i d = 7.0a 13.0 16 m ? forward transconductance g fs v ds = 15v, i d = 9.0a 7.0 s charges, capacitances and gate resistance input capacitance c iss 1500 output capacitance c oss 158 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 145 pf total gate charge q g(tot) 36 threshold gate charge q g(th) 2.35 gate-to-source charge q gs 4.0 gate-to-drain charge q gd v gs =10 v, v ds =15 v, i d =10a 8.5 nc switching characteristics turn-on delay time td(on) 14.5 rise time tr 7.2 turn-off delay time td(off) 59 fall time tf v gs = 10 v, v dd = 15 v, i d =2a, r g =6 ? 10. 2 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.5a 0.45 0.75 1.05 v WNM3007 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics on-resistance vs. drain current on-resistance vs. junction temperature transfer characteristics 246810 0 20 40 60 80 100 i ds = 9a r ds(on) - on-resistance (m : ) v gs -gate-to-source voltage(v) 012345 0 10 20 30 40 v gs =10v v gs =4.5v v gs =3.0v v gs =2.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) 48 on-resistance vs. gate-to-source voltage threshold voltage vs. temperature 12 16 20 0 4 8 12 16 20 vgs=4.5v vgs=10v r ds(on) - on-resistance(m : ) i d s -drain-to-source current(a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 v ds =5v i ds -drain-to-source current(a) v gs -gate-to-source voltage(v) -50 0 c 25 0 c 125 0 c -50 0 50 100 150 6 9 12 15 v gs =10v i d =9a r ds(on) (mohm) temperature( 0 c) -50 0 50 100 150 0.5 1.0 1.5 2.0 i ds =250ua v gs(th) voltage (v) temperature( 0 c) WNM3007 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 i sd -source-to-drain current(a) v sd -source-to-drain voltage(v) v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms 0 90 150 30 60 power (w) time (sec) 120 110 10 -1 10 -2 10 -3 0 5 10 15 20 25 0 400 800 1200 1600 2000 2400 crss coss ciss v gs =0v f=1mhz c - capacitance(pf) v ds drain-to-source voltage (v) 0 1020304050 0 2 4 6 8 10 12 v gs =10v , v ds =15v , i ds =10a v gs - gate source voltage (v) q g (nc) WNM3007 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
transient thermal response (junction-to-ambient) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 suare wave pulse duration (sec) normalied effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm WNM3007 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sop-8l dimensions in millimeter symbol min. typ. max. a 1.350 1.550 1.750 a1 0.100 0.175 0.250 a2 1.350 1.450 1.550 b 0.330 0.420 0.510 c 0.170 0.210 0.250 d 4.700 4.900 5.100 e 3.800 3.900 4.000 e1 5.800 6.000 6.200 e 1.270(bsc) l 0.400 0.835 1.270 ? 0 e 8 e WNM3007 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
